DocumentCode
3318540
Title
An industrial temperature probe based on SiC diodes
Author
Draghici, Florin ; Badila, Marian ; Brezeanu, Gheorghe ; Rusu, I. ; Craciunoiu, Florea ; Enache, Ioan
Author_Institution
Politeh. Univ. Bucharest, Bucharest, Romania
Volume
02
fYear
2010
fDate
11-13 Oct. 2010
Firstpage
409
Lastpage
412
Abstract
A temperature probe based on 4H-SiC Schottky diodes is proposed. These diodes have been fabricated and characterized for temperature sensor applications. A conversion circuit to 4-20mA output current for ambient to maximum (400°C) input temperature was designed and tested.
Keywords
Schottky diodes; silicon compounds; temperature sensors; wide band gap semiconductors; 4H-SiC Schottky diodes; SiC; conversion circuit; industrial temperature probe; temperature sensor applications; Current measurement; Probes; Schottky diodes; Silicon carbide; Temperature measurement; Temperature sensors; high temperature sensors; industrial environment; silicon carbide (SiC);
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2010 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4244-5783-0
Type
conf
DOI
10.1109/SMICND.2010.5650596
Filename
5650596
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