DocumentCode
3318559
Title
Simulation of the strain effect in the p-Ge1-xSix of kinetic factors
Author
Dragunov, Valery P. ; Shishkov, Andrey A.
Author_Institution
Dept. of Semicond. Devices & Microelectron., Novosibirsk State Tech. Univ., Russia
fYear
2001
fDate
2001
Firstpage
21
Lastpage
23
Abstract
The strain effect should be taken into consideration for calculation of the kinetic factors and evaluation of characteristics of the Ge1-xSix pressure sensors. For the calculation of the piezoresistance it is necessary to take into consideration the spin-orbital zone and to use the three-region model of spectrum. In this paper the temperature dependencies of the drift mobility, the piezoresistance factors, the relative resistivity as functions of strain are calculated for the case of x=0 (Ge) under the various concentrations of impurity
Keywords
Ge-Si alloys; carrier mobility; electrical resistivity; piezoresistance; semiconductor materials; spin-orbit interactions; GeSi; drift mobility; electrical resistivity; kinetic factors; numerical simulation; p-Ge1-xSix; piezoresistance; pressure sensor; spin-orbital zone; strain effect; temperature dependence; three-region model; Atom optics; Capacitive sensors; Conductivity; Equations; Impurities; Kinetic theory; Lattices; Particle beam optics; Phonons; Piezoresistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2001. Proceedings. 2nd Annual Siberian Russian Student Workshop on
Conference_Location
Erlagol, Altai
Print_ISBN
5-7782-0347-0
Type
conf
DOI
10.1109/SREDM.2001.939133
Filename
939133
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