DocumentCode :
3318570
Title :
Gigahertz SiGe BiCMOS FPGAs with new architectures and novel power management schemes
Author :
Zhou, K. ; Channakeshav ; Chu, M. ; Guo, J.-R. ; Liu, S.-C. ; Kraft, R.P. ; You, C. ; McDonald, J.F.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
fYear :
2002
fDate :
16-18 Dec. 2002
Firstpage :
182
Lastpage :
188
Abstract :
The demand for high speed Field Programmable Gate Arrays (FPGAs) has been on a rise. These were never possible using CMOS as the basic device. People were able to achieve frequencies in the range of 70-250 MHz using CMOS. The availability of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) devices has opened the door for Gigahertz FPGAs. An FPGA with a speed of over 5 GHz was reported by B.S. Goda (2000) using SiGe 5HP technology. However in order to scale up FPGAs significantly, a serious power management scheme must be in place. Apart from this, architectural changes can be made to improve the speed and reduce the power. This paper elaborates on the architecture of the new SiGe FPGA and its advantages over the previous generation SiGe FPGAs. The entire Configuration Logic Block (CLB) has been implemented using seven Current Mode Logic (CML) trees. Apart from these, a novel power management scheme is implemented which allows the FPGA to operate at multiple modes: fast, non-critical, slow and off. The new FPGA can run in the fast mode when speed is critical or in the slow mode when power is the limiting issue. The CLB can run up to 5.96 GHz.
Keywords :
BiCMOS logic circuits; Ge-Si alloys; current-mode logic; field programmable gate arrays; high-speed integrated circuits; low-power electronics; semiconductor materials; 5.96 GHz; CML trees; SiGe; SiGe BiCMOS; SiGe HBT devices; configuration logic block; current mode logic trees; gigahertz FPGAs; high speed FPGAs; power management scheme; Application specific integrated circuits; BiCMOS integrated circuits; Bipolar transistors; Energy management; Field programmable gate arrays; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Programmable logic arrays; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Field-Programmable Technology, 2002. (FPT). Proceedings. 2002 IEEE International Conference on
Print_ISBN :
0-7803-7574-2
Type :
conf
DOI :
10.1109/FPT.2002.1188680
Filename :
1188680
Link To Document :
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