Complete transient simulation of flash EEPROM devices

Author

Keeney, S. ; Piccinini, F. ; Morelli, M. ; Mathewson, A. ; Lombardi, C. ; Bez, Riadh ; Ravazzi, L. ; Cantarelli, D.

Author_Institution

NMRC, Univ. Coll. Cork, Ireland

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

201

Lastpage

204

Abstract

It has been demonstrated that the Fowler-Nordheim tunneling, hot electron injection, and band-to-band tunneling current models incorporated into the 2D device simulator HFIELDS have allowed an accurate simulation and analysis of the flash EEPROM cell during the transient writing cycles. These represent all the important physical mechanisms which occur during the writing of flash EEPROM devices. The physical models have been verified by comparison with flash EEPROM devices fabricated using a 1.0 mu m technology.<>

Keywords

EPROM; electronic engineering computing; hot carriers; integrated memory circuits; semiconductor device models; transient response; tunnelling; 1 micron; 2D device simulator; Fowler-Nordheim tunneling; HFIELDS; MOS IC; band-to-band tunneling current models; flash EEPROM devices; hot electron injection; physical models; transient simulation; transient writing cycles; Analytical models; EPROM; Secondary generated hot electron injection; Transient analysis; Tunneling; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237193

Filename

237193