Title :
Complete transient simulation of flash EEPROM devices
Author :
Keeney, S. ; Piccinini, F. ; Morelli, M. ; Mathewson, A. ; Lombardi, C. ; Bez, Riadh ; Ravazzi, L. ; Cantarelli, D.
Author_Institution :
NMRC, Univ. Coll. Cork, Ireland
Abstract :
It has been demonstrated that the Fowler-Nordheim tunneling, hot electron injection, and band-to-band tunneling current models incorporated into the 2D device simulator HFIELDS have allowed an accurate simulation and analysis of the flash EEPROM cell during the transient writing cycles. These represent all the important physical mechanisms which occur during the writing of flash EEPROM devices. The physical models have been verified by comparison with flash EEPROM devices fabricated using a 1.0 mu m technology.<>
Keywords :
EPROM; electronic engineering computing; hot carriers; integrated memory circuits; semiconductor device models; transient response; tunnelling; 1 micron; 2D device simulator; Fowler-Nordheim tunneling; HFIELDS; MOS IC; band-to-band tunneling current models; flash EEPROM devices; hot electron injection; physical models; transient simulation; transient writing cycles; Analytical models; EPROM; Secondary generated hot electron injection; Transient analysis; Tunneling; Writing;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237193
