DocumentCode :
3318580
Title :
The spectrum hole in the strained layers Si1-xGex
Author :
Sychev, Andrew Yu ; Makarov, Eugenie A.
Author_Institution :
Dept. of Semicond. Devices & Microelectron., NSTU, Novosibirsk, Russia
fYear :
2001
fDate :
2001
Firstpage :
24
Lastpage :
25
Abstract :
The new expression for account of a spectrum holes in the strained semiconductor with the account spin-orbital splitting is received. The received expression does not require application of numerical methods for account of a spectrum and essentially facilitates account of various dependences necessary at modeling transport hole in the strained layers Si1-xGex
Keywords :
Ge-Si alloys; semiconductor materials; spin-orbit interactions; Si1-xGex strained layer; SiGe; hole transport; semiconductor; spectrum hole; spin-orbital splitting; Computer simulation; Eigenvalues and eigenfunctions; Equations; Gaussian processes; Germanium silicon alloys; Hydrogen; Kinetic theory; Orbital calculations; Resonance; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2001. Proceedings. 2nd Annual Siberian Russian Student Workshop on
Conference_Location :
Erlagol, Altai
Print_ISBN :
5-7782-0347-0
Type :
conf
DOI :
10.1109/SREDM.2001.939134
Filename :
939134
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3318580
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