• DocumentCode
    3318580
  • Title

    The spectrum hole in the strained layers Si1-xGex

  • Author

    Sychev, Andrew Yu ; Makarov, Eugenie A.

  • Author_Institution
    Dept. of Semicond. Devices & Microelectron., NSTU, Novosibirsk, Russia
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    24
  • Lastpage
    25
  • Abstract
    The new expression for account of a spectrum holes in the strained semiconductor with the account spin-orbital splitting is received. The received expression does not require application of numerical methods for account of a spectrum and essentially facilitates account of various dependences necessary at modeling transport hole in the strained layers Si1-xGex
  • Keywords
    Ge-Si alloys; semiconductor materials; spin-orbit interactions; Si1-xGex strained layer; SiGe; hole transport; semiconductor; spectrum hole; spin-orbital splitting; Computer simulation; Eigenvalues and eigenfunctions; Equations; Gaussian processes; Germanium silicon alloys; Hydrogen; Kinetic theory; Orbital calculations; Resonance; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2001. Proceedings. 2nd Annual Siberian Russian Student Workshop on
  • Conference_Location
    Erlagol, Altai
  • Print_ISBN
    5-7782-0347-0
  • Type

    conf

  • DOI
    10.1109/SREDM.2001.939134
  • Filename
    939134
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3318580