Very high-speed ultraviolet photodetectors fabricated on GaN

Author

Carrano, J.C. ; Li, T. ; Brown, D. ; Grudowski, P.A. ; Eiting, C.J. ; Dupuis, R.D. ; Campbell, J.C.

Author_Institution

Texas Univ., Austin, TX, USA

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

77

Abstract

We report both MSM and p-i-n UV photodetectors with very fast 10%-90% rise times of 23 psec and 92 psec respectively. In order to verify the accuracy of our time domain measurements, we have also measured the frequency response of these photodetectors. The MSM devices with 2 μm gap spacing indicate a bandwidth in excess of 16 GHz. The electrical bandwidth of the p-i-n devices is > 1.5 GHz

Keywords

III-V semiconductors; frequency response; gallium compounds; metal-semiconductor-metal structures; optical fabrication; p-i-n photodiodes; photodetectors; ultraviolet detectors; 1.5 GHz; 23 ps; 92 ps; GaN; MSM UV photodetectors; MSM devices; electrical bandwidth; frequency response; optical fabrication; p-i-n UV photodetectors; p-i-n devices; time domain measurements; very high-speed ultraviolet photodetectors; Bandwidth; Frequency domain analysis; Frequency measurement; Frequency response; Gallium nitride; Missiles; PIN photodiodes; Photodetectors; Pulse measurements; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737741

Filename

737741