DocumentCode
331862
Title
High-speed, high-reliability superlattice avalanche photodiodes
Author
Watanabe, Isao
Author_Institution
Optoelectron. & High-Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan
Volume
1
fYear
1998
fDate
1-4 Dec 1998
Firstpage
79
Abstract
High-speed and high-reliability planar-structure InAlAs-InAlGaAs superlattice avalanche photodiodes (APDs) were realized for the first time. The obtained characteristics are suitable far practical 10-Gbps high sensitivity optical receivers
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; gallium arsenide; high-speed optical techniques; indium compounds; optical receivers; semiconductor device reliability; semiconductor superlattices; sensitivity; 10 Gbit/s; Gbps high sensitivity optical receivers; InAlAs-InAlGaAs; high-speed high-reliability superlattice avalanche photodiodes; planar-structure; Absorption; Aging; Avalanche photodiodes; Dark current; Dynamic range; Etching; Indium phosphide; Optical receivers; Photoconductivity; Superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.737742
Filename
737742
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