Title :
A high speed Si photodiode grown by epitaxial lateral growth
Author :
Schaub, J.D. ; Li, R. ; Schow, C.L. ; Campbell, J.C. ; Neudeck, Gerold W. ; Denton, Jack
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
Summary form only given. We report on a resonant cavity enhanced (RCE) Si photodiode grown by epitaxial lateral overgrowth that has achieved a bandwidth of 27 GHz and a peak efficiency of 54%. This is the highest speed reported for a Si PIN photodiode and the highest bandwidth-efficiency product for any Si-based photodetector
Keywords :
optical resonators; p-i-n photodiodes; photodetectors; silicon; 27 GHz; 54 percent; Si; Si photodiode; Si-based photodetector; epitaxial lateral growth; epitaxial lateral overgrowth; high speed Si photodiode; highest bandwidth-efficiency product; highest speed; peak efficiency; resonant cavity enhanced; Absorption; Bandwidth; Biomembranes; Epitaxial growth; Fingers; Implants; Lifting equipment; Mirrors; PIN photodiodes; Photodetectors;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737744
