Modeling advanced bipolar devices for high performance applications

Author

Knepper, R.W.

Author_Institution

IBM, Hopewell Junction, NY, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

177

Lastpage

180

Abstract

A bipolar modeling methodology is described which uses a series of 2-D process and device simulation programs and a circuit model generation program each linked together in order to generate equivalent circuit models for numerical circuit simulation. The programs have been used to study process windows and device sensitivities, optimize process and device technology, and generate models for circuit design for IBMs advanced bipolar technology development. The methodology is described using examples of a Si-SiGe n-p-n HBT (heterojunction bipolar transistor) and an integrated VPNP structure. Efforts under development for future bipolar device modeling requirements are briefly described.<>

Keywords

bipolar integrated circuits; bipolar transistors; electronic engineering computing; equivalent circuits; heterojunction bipolar transistors; semiconductor device models; 2D simulation programs; HBT; Si-SiGe; advanced bipolar devices; circuit model generation program; device simulation; equivalent circuit models; heterojunction bipolar transistor; high performance applications; integrated VPNP structure; modeling methodology; n-p-n; numerical circuit simulation; process simulation; Circuit simulation; Circuit synthesis; Design optimization; Equivalent circuits; Heterojunction bipolar transistors; Integrated circuit technology; Numerical models;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237199

Filename

237199