Title :
Electrical characterization of directly-bonded GaAs and Si
Author :
Zhou, Yucai ; Zhu, Zuhua ; Lo, Yu-Hwa
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
The advantages of direct bonding III-V wafers, such as InP and InGaAs, to Si wafers for device fabrications are well known. However, the case of integrating GaAs into Si has not been fully studied, partly due to the large difference of thermal expansion coefficients between them. We report the fabrication of heterojunctions between Si and GaAs by directly bonding at a temperature of 725°C in a H2 atmosphere. The electrical properties of the bonded interface were studied by direct I-V analysis
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; semiconductor heterojunctions; silicon; surface treatment; wafer bonding; 725 C; GaAs; GaAs-Si; III-V wafers to Si; Si; bonded interface; chemical surface preparations; conduction band offset; direct I-V analysis; direct bonding; electrical properties; heterojunctions fabrication; high temperature bonded junction; hydrophilic Si surfaces; hydrophobic GaAs surface; hydrophobic Si surfaces; ideality factor; mirror polished (100) wafers; ohmic contacts; wafer bonding; Atmosphere; Fabrication; Gallium arsenide; Heterojunctions; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Temperature; Thermal expansion; Wafer bonding;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737748
