1 to 25 GHz vacuum FET distributed amplifier analysis

Author

Warren, H.P. ; Wiltsey, T.J. ; Chou, E.C. ; Wong, F.C. ; Luhmann, N.C., Jr.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

171

Lastpage

174

Abstract

A proposed state-of-the-art 1-25 GHz, vacuum field emitter triode (FET) distributed amplifier (DA) of 9+or-1 dB maximum gain has been tested in a Touchstone computer simulation. Theoretical analysis reveals that the vacuum FET DA´s gain-bandwidth product is limited primarily by microstripline metal interconnect losses and by low device f/sub T/ values, but surprisingly not by the internal device losses. The results suggest that a vacuum FET DA with low loss microstripline interconnect and high device f/sub T/ values is potentially of exceptionally high gain-bandwidth product. An investigation of device enhancement for high-frequency operation compares the relative merits of a lower emitter work function and a greater electric field enhancement factor beta =E/V/sub gc/.<>

Keywords

digital simulation; electron field emission; electronic engineering computing; losses; microwave amplifiers; microwave tubes; vacuum microelectronics; 1 to 25 GHz; Touchstone computer simulation; amplifier analysis; electric field enhancement factor; emitter work function; field emitter triode; gain-bandwidth product; high-frequency operation; low loss interconnect; microstripline metal interconnect losses; vacuum distributed amplifier; Computer simulation; Distributed amplifiers; FETs; Gain; Microstrip; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237200

Filename

237200