Title :
1 to 25 GHz vacuum FET distributed amplifier analysis
Author :
Warren, H.P. ; Wiltsey, T.J. ; Chou, E.C. ; Wong, F.C. ; Luhmann, N.C., Jr.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
A proposed state-of-the-art 1-25 GHz, vacuum field emitter triode (FET) distributed amplifier (DA) of 9+or-1 dB maximum gain has been tested in a Touchstone computer simulation. Theoretical analysis reveals that the vacuum FET DA´s gain-bandwidth product is limited primarily by microstripline metal interconnect losses and by low device f/sub T/ values, but surprisingly not by the internal device losses. The results suggest that a vacuum FET DA with low loss microstripline interconnect and high device f/sub T/ values is potentially of exceptionally high gain-bandwidth product. An investigation of device enhancement for high-frequency operation compares the relative merits of a lower emitter work function and a greater electric field enhancement factor beta =E/V/sub gc/.<>
Keywords :
digital simulation; electron field emission; electronic engineering computing; losses; microwave amplifiers; microwave tubes; vacuum microelectronics; 1 to 25 GHz; Touchstone computer simulation; amplifier analysis; electric field enhancement factor; emitter work function; field emitter triode; gain-bandwidth product; high-frequency operation; low loss interconnect; microstripline metal interconnect losses; vacuum distributed amplifier; Computer simulation; Distributed amplifiers; FETs; Gain; Microstrip; Testing;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237200
