Compliant substrate strain modulated epitaxy for WDM laser arrays

We propose a new method of making a multiple-wavelength laser array by using strain modulated epitaxy. This growth process, which enables growth on a smooth substrate surface while enabling three dimensional band structure engineering, uses a bottom-patterned compliant substrate to modulate the strain variation on the epitaxial layer grown on the compliant substrate. Our model theoretically predicts realization of a multiple wavelength laser array using bottom patterned compliant substrates. Higher As composition and thicker InAsP epilayers produce larger laser array sizes, and increase the wavelength span. A 67% As composition of InAsP is the best result for WDM arrays centered near 1.55 μm