Mathematic modeling and the IMPATT-diodes characteristics calculation program

Author

Datiev, K.M. ; Malkhosian, R.K.

Author_Institution

North-Caucasian State Technol. Univ., Vladikavkaz, Russia

fYear

2001

fDate

2001

Firstpage

42

Lastpage

43

Abstract

The automatized projection of various radio-electronic systems on IMPATT-diodes is impossible without the adequate models of the said active elements. We have carried out the simulation of IMPATT-diodes prepared from gallium arsenide of the wavelength in the millimeter range in the quasi-hydrodynamic approach. The various structures of the IMPATT-diodes active zone with the uniform and non-uniform admixture atoms distribution are considered. The processes of transition of current carriers in the IMPATT-diode structure were described by the quasi-hydrodynamic equation system including Poisson´s equation and the equation of continuity for electrons and holes

Keywords

III-V semiconductors; IMPATT diodes; Poisson equation; gallium arsenide; millimetre wave diodes; semiconductor device models; GaAs; IMPATT diode; Poisson equation; active element; continuity equation; gallium arsenide; millimeter-wave device; quasi-hydrodynamic model; radioelectronic system; Boundary conditions; Charge carrier processes; Dielectrics; Diodes; Gallium arsenide; Hydrodynamics; Mathematical model; Mathematics; Poisson equations; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2001. Proceedings. 2nd Annual Siberian Russian Student Workshop on

Conference_Location

Erlagol, Altai

Print_ISBN

5-7782-0347-0

Type

conf

DOI

10.1109/SREDM.2001.939141

Filename

939141