Title :
Porous silicon electron-emitting source
Author :
Yue, W.K. ; Parker, D.L. ; Weichold, M.H.
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
A novel material which consists of porous silicon on silicon has been used to demonstrate high-current, low-voltage electron field emission. The porous silicon film is grown on a silicon wafer through electrochemical anodization in concentrated hydrofluoric acid. Apparently extremely sharp silicon tips are formed at the silicon/porous silicon interface which allow low field extraction of electrons from the substrate. Evidence confirming electron vacuum transport from this electron-emitting source is presented.<>
Keywords :
anodisation; cathodes; electron field emission; elemental semiconductors; porous materials; silicon; vacuum microelectronics; Si; Si/porous Si interface; concentrated HF acid; electrochemical anodization; electron field emission; electron-emitting source; high-current; low field extraction; low-voltage; porous semiconductor film; sharp tips; Electron emission; Semiconductor films; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237201
