Development progress toward the fabrication of vacuum microelectronic devices using conventional semiconductor processing

First attempts to create functioning vacuum microelectronic devices using a newly proposed cusp molding technique produced a few structures on which basic diode properties could be measured. The vacuum I-V characteristics obtained are presented. Field emission is believed to be the principal conduction mechanism. Fowler-Nordheim plots of these data are discussed along with the need to correct the measurements for nonemission conduction and some empirical methods for doing so. Similar measurements performed in air at atmospheric pressure are also presented and compared.<>