Novel silicon avalanche diode as a direct modulated cathode with integrated planar electron-optics

Design constraints, process technology, and electrical and related stability results are discussed for silicon avalanche-diodes with integrated electron-optic elements. It is demonstrated that such diodes can operate in vacuum tubes. The vacuum current is obtained by applying a voltage of less than 12 V. Modulation by video-frequencies is possible above the avalanche breakdown voltage of about 5 V. Introducing planar lenses gives new options for traditional gun designs. Long lifetimes and stable operation can be obtained when chips are mounted with ´IC-discipline´ in a tube and, in operation, are not subjected to ion bombardment.<>