A low-voltage voltage-controlled ring-oscillator employing dynamic-threshold-MOS and body-biasing techniques

Author

Abdollahvand, Somayeh ; Oliveira, Luis B. ; Gomes, Luis ; Goes, Joao

Author_Institution

Dept. of Electr. Eng. (DEE), Univ. Nova de Lisboa (UNL), Monte da Caparica, Portugal

fYear

2015

fDate

24-27 May 2015

Firstpage

1294

Lastpage

1297

Abstract

In this paper a four-stage self-biased voltage-controlled oscillator (VCO) is presented. The proposed ring-oscillator circuit employs a combination of dynamic-threshold-MOS (DT-MOS) and bulk-driven transistors to design low-voltage low-power VCO with high oscillation frequency. By using an auxiliary body-driven latch, the VCO achieves a wide operating frequency range from 0.88 to 1.36 GHz (more than 40% tuning range). Simulation results in a 65-nm CMOS technology shows frequency variations of 3% against temperature variation of -20 °C to 85 °C, with only 0.36 mW power consumption using a 0.7 V supply voltage.

Keywords

CMOS integrated circuits; low-power electronics; voltage-controlled oscillators; CMOS technology; body-biasing techniques; bulk-driven transistors; dynamic-threshold-MOS; frequency 0.88 GHz to 1.36 GHz; low-power VCO; low-voltage voltage-controlled ring-oscillator; oscillation frequency; power 0.36 mW; size 65 nm; voltage 0.7 V; CMOS integrated circuits; Delays; Ring oscillators; Transistors; Tuning; Voltage-controlled oscillators; DT-MOS; VCO; bulk-driven; low-voltage; ring-oscillator; self-biasing;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2015 IEEE International Symposium on

Conference_Location

Lisbon

Type

conf

DOI

10.1109/ISCAS.2015.7168878

Filename

7168878