DocumentCode
3318787
Title
Low threshold and low internal loss 1.55- mu m strained-layer single quantum well lasers
Author
Zah, C.E. ; Bhat, R. ; Cheung, K.W. ; Andreadakis, N.C. ; Menocal, S.G. ; Wu, T.C. ; Favire, F.J. ; Xoza, M. ; Hwang, D.M. ; Lee, T.P.
Author_Institution
Bellcore, Red Bank, NJ, USA
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
129
Lastpage
131
Abstract
Low-threshold lasers are important for minimizing the power consumption and the crosstalk of parallel optical interconnects in switching and supercomputer applications. Low-threshold (319 A/cm/sup 2/) strained-layer single quantum well lasers with low internal loss (>
Keywords
laser transitions; losses; semiconductor junction lasers; 1.55 micron; SQW; crosstalk; fabrication; low internal loss; low threshold lasers; parallel optical interconnects; power consumption; semiconductor lasers; single quantum well lasers; strained-layer; supercomputer applications; switching applications; Crosstalk; Energy consumption; Optical device fabrication; Optical interconnections; Optical losses; Power lasers; Quantum well lasers; Supercomputers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237210
Filename
237210
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