Femtosecond X-ray spectroscopy at the advanced light source

Author

Chin, A.H. ; Schoenlein, R.W. ; Glover, T.E. ; Heimann, P. ; Leemans, W.P. ; Shank, C.V. ; Zolotorev, S. ; Zholents, A.A.

Author_Institution

Ernest Orlando Lawrence Berkeley Nat. Lab., CA, USA

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

134

Abstract

The advent of femtosecond lasers has permitted the study of ultrafast dynamics in condensed matter, mainly by observing changes in optical properties. To study ultrafast structural dynamics in InSb under high-intensity laser excitation, we performed femtosecond time-resolved X-ray diffraction using femtosecond X-ray pulses generated via right-angle Thomson scattering

Keywords

III-V semiconductors; X-ray diffraction; high-speed optical techniques; indium compounds; laser beam effects; 100 fs; 80 mJ; InSb; advanced light source; condensed matter; femtosecond X-ray pulse generation; femtosecond X-ray spectroscopy; femtosecond time-resolved X-ray diffraction; high-intensity laser excitation; optical properties; right-angle Thomson scattering; ultrafast dynamics; ultrafast structural dynamics; Laser excitation; Laser transitions; Light sources; Optical diffraction; Optical pulse generation; Optical scattering; Spectroscopy; Ultrafast optics; X-ray diffraction; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737769

Filename

737769