DocumentCode :
3318908
Title :
On the morphology and texture of InN thin films deposited by reactive RF-magnetron sputtering
Author :
Braic, Mariana ; Zoita, N.C. ; Braic, V.
Author_Institution :
Nat. Inst. for Optoelectron., Magurele-Bucharest, Romania
Volume :
02
fYear :
2010
fDate :
11-13 Oct. 2010
Firstpage :
383
Lastpage :
386
Abstract :
We report successful deposition of polycrystalline InN thin films on un-etched Si wafers, without nucleation buffer, by reactive RF magnetron sputtering in pure N2 atmosphere. The modification of the structural and morphological characteristics of InN films are presented, as function of deposition pressure and deposition temperature.
Keywords :
III-V semiconductors; indium compounds; semiconductor growth; semiconductor thin films; sputter deposition; texture; InN; Si; deposition pressure; deposition temperature; morphology; reactive RF-magnetron sputtering; structural property; texture; thin films; unetched Si wafers; Films; Rough surfaces; Sputtering; Substrates; Surface morphology; Surface roughness; Surface treatment; Indium nitride thin film; RF-magnetron sputtering; growth temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4244-5783-0
Type :
conf
DOI :
10.1109/SMICND.2010.5650626
Filename :
5650626
Link To Document :
بازگشت