Title :
Carrier lifetime measurement of long wavelength GaInNAs lasers
Author :
Koyama, F. ; Sato, S. ; Miyamoto, T. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We investigated the dependence of the carrier lifetime of GaInNAs lasers on the nitrogen composition. Carrier lifetime reduction partly contributes to high thresholds of GaInNAs lasers, but other origins such as compositional fluctuations should be considered and avoided
Keywords :
III-V semiconductors; carrier lifetime; fluctuations; gallium compounds; indium compounds; laser variables measurement; optical testing; semiconductor device testing; semiconductor lasers; GaInNAs; GaInNAs lasers; carrier lifetime measurement; carrier lifetime reduction; compositional fluctuations; high thresholds; long wavelength GaInNAs lasers; nitrogen composition; Charge carrier density; Charge carrier lifetime; Density measurement; Fluctuations; Gain measurement; Gallium arsenide; Laser theory; Nitrogen; Optical pulses; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737774
