• DocumentCode
    331891
  • Title

    Carrier lifetime measurement of long wavelength GaInNAs lasers

  • Author

    Koyama, F. ; Sato, S. ; Miyamoto, T. ; Iga, K.

  • Author_Institution
    Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
  • Volume
    1
  • fYear
    1998
  • fDate
    1-4 Dec 1998
  • Firstpage
    147
  • Abstract
    We investigated the dependence of the carrier lifetime of GaInNAs lasers on the nitrogen composition. Carrier lifetime reduction partly contributes to high thresholds of GaInNAs lasers, but other origins such as compositional fluctuations should be considered and avoided
  • Keywords
    III-V semiconductors; carrier lifetime; fluctuations; gallium compounds; indium compounds; laser variables measurement; optical testing; semiconductor device testing; semiconductor lasers; GaInNAs; GaInNAs lasers; carrier lifetime measurement; carrier lifetime reduction; compositional fluctuations; high thresholds; long wavelength GaInNAs lasers; nitrogen composition; Charge carrier density; Charge carrier lifetime; Density measurement; Fluctuations; Gain measurement; Gallium arsenide; Laser theory; Nitrogen; Optical pulses; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-4947-4
  • Type

    conf

  • DOI
    10.1109/LEOS.1998.737774
  • Filename
    737774
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=331891