DocumentCode :
3318921
Title :
Synthesis and characterization of nickel cobalt oxide thin films
Author :
Calin, G. ; Irimia, M. ; Scarlat, C. ; Purica, M. ; Comanescu, F. ; Iacomi, F.
Author_Institution :
Fac. of Phys., Al. I.Cuza Univ. of Iasi, Iasi, Romania
Volume :
02
fYear :
2010
fDate :
11-13 Oct. 2010
Firstpage :
387
Lastpage :
390
Abstract :
p-type transparent and conductive cobalt-nickel oxide films of 130 nm thickness, have been deposited by spin coating method on glass substrates. The electrical and optical properties of the oxides have been studied as a function of the x=Co/(Co+Ni) ratio. A combination of x-ray diffraction, x-ray photoelectron spectroscopy and Raman spectroscopy was used in order to investigate thin film structures. Thin films of mixed oxides: NiCo2O4, Ni1.71 Co1.29 O4; NiO were obtained for x>0.60. The electrical conductivity of these films reaches a maximum conductivity at this stoichiometry.
Keywords :
Raman spectra; X-ray diffraction; X-ray photoelectron spectra; cobalt compounds; electrical conductivity; nickel compounds; semiconductor growth; semiconductor materials; semiconductor thin films; spin coating; stoichiometry; transparency; NiCoO; Raman spectroscopy; SiO2-Jk; X-ray diffraction; X-ray photoelectron spectroscopy; conductive cobalt-nickel oxide; electrical conductivity; electrical properties; glass substrates; nickel cobalt oxide thin films; optical properties; p-type transparent films; size 130 nm; spin coating; stoichiometry; thin film structures; Conductivity; Measurement by laser beam; Nickel; Optical films; Scanning electron microscopy; X-ray scattering; Raman spectroscopy; electrical properties; optical properties; p-type TCO; structure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4244-5783-0
Type :
conf
DOI :
10.1109/SMICND.2010.5650627
Filename :
5650627
Link To Document :
بازگشت