DocumentCode
331893
Title
High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes
Author
Biyikli, Necmi ; Kimukin, Ibrahim ; Aytur, Orhan ; Gökkavas, Mutlu ; Ulu, Gokhan ; Mirin, R. ; Christensen, D.H. ; Ünlü, M. Selim ; Özbay, Ekmel
Author_Institution
Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
Volume
1
fYear
1998
fDate
1-4 Dec 1998
Firstpage
157
Abstract
We report our work on design, fabrication, and testing of widely tunable high-speed RCE p-i-n photodiodes for operation around 820 nm. The details of the epitaxial structure we have used in this work is given
Keywords
infrared detectors; optical resonators; optical tuning; p-i-n photodiodes; photodetectors; 820 nm; 90 percent; epitaxial structure; high-speed widely-tunable resonant cavity enhanced p-i-n photodiodes; optical design; optical fabrication; optical testing; widely tunable high-speed RCE p-i-n photodiodes; Absorption; Etching; Fabrication; Gallium arsenide; Mirrors; Ohmic contacts; PIN photodiodes; Photodetectors; Resonance; USA Councils;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.737779
Filename
737779
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