GaAs VCSELs for biased and bias-free multi-Gb/s data transmission over 4.3 km standard 1300 nm single-mode fiber

Author

Schnitzer, P. ; Jäger, R. ; Grabherr, M. ; Wiedenmann, D. ; Mederer, F. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

164

Abstract

Summary form only given. We have demonstrated 3 Gb/s biased and 1 Gb/s bias-free data transmission with 2³¹-1 PRBS signals. A BER of better than 10^-11 has been achieved and the power penalty for 4.3 km transmission is about 2.1 dB for 3 Gb/s biased and 2.5 dB for 1 Gb/s bias-free modulation. The investigated single-mode 820 nm GaAs VCSEL is able to fulfill the requirements for the gigabit Ethernet

Keywords

III-V semiconductors; data communication; gallium arsenide; optical fibre LAN; optical fibre subscriber loops; semiconductor lasers; surface emitting lasers; 1 Gbit/s; 1300 nm; 3 Gbit/s; 4.3 km; 820 nm; GaAs; GaAs VCSEL; GaAs VCSELs; Gb/s bias-free modulation; PRBS signals; bias-free data transmission; bias-free multi-Gb/s data transmission; biased multi-Gb/s data transmission; gigabit Ethernet; power penalty; standard 1300 nm single-mode fiber; Bit error rate; Bit rate; Data communication; Filtering; Gallium arsenide; Optical modulation; Solids; Testing; Threshold voltage; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737782

Filename

737782