Title :
Metastable argon conditions and balance composition of argon-silane rf plasma
Author :
Hudaybergenov, Gamzat J. ; Strunin, Vladimir I. ; Lyahov, A.A. ; Shkourkin, Vladimir V.
Author_Institution :
Omsk State Univ., Russia
Abstract :
Silane in argon plasma kinetics with next decay products delivering to the substrate through nozzle is presented. In active discharge zone the kinetics of plasma-chemical reactions are closely connected with the kinetics of free electrons. Numerical modeling of the physics and chemical processes was made for cylindrical geometry. Numerical modeling results of calculations of the rate constants of electronic reactions and from the equations of chemical kinetics according to defined values of rate constants of some plasma chemical process, the values of equipoise concentrations depending on period of mixture residence in discharge zone were obtained
Keywords :
amorphous semiconductors; argon; hydrogen; plasma chemistry; plasma kinetic theory; reaction kinetics; semiconductor technology; silicon; Ar; Ar-silane RF plasma; Si:H; active discharge zone; balance composition; discharge zone; metastable argon conditions; numerical modeling; plasma kinetics; plasma-chemical reactions; semiconductor technology; Argon; Chemical processes; Electrons; Geometry; Kinetic theory; Metastasis; Numerical models; Physics; Plasma chemistry; Solid modeling;
Conference_Titel :
Electron Devices and Materials, 2001. Proceedings. 2nd Annual Siberian Russian Student Workshop on
Conference_Location :
Erlagol, Altai
Print_ISBN :
5-7782-0347-0
DOI :
10.1109/SREDM.2001.939160
