Title :
Differential capacitance technique for characterization of hot carrier induced degradation in p-channel MOSFETs
Author :
Kugelmass, S.M. ; Shacham-Diamand, Y. ; Krusius, J.P.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
A novel technique for the characterization of hot-electron-induced degradation in p-channel MOS devices is described. By measuring the gate to source/drain capacitance both before and after constant bias stressing, a capacitance difference curve can be generated from which the amount of electrically active sites is extracted. Detrapping of trapped charge has been observed and is shown to be sensitive to measurement conditions. Two-dimensional device simulations have been performed to analyze and confirm these experimental results.<>
Keywords :
capacitance measurement; hot carriers; insulated gate field effect transistors; semiconductor device models; semiconductor device testing; 2D device simulations; capacitance difference curve; constant bias stressing; detrapping; electrically active sites; gate-source/drain capacitance; hot carrier induced degradation; p-channel MOSFETs; Analytical models; Capacitance measurement; Charge measurement; Current measurement; Degradation; Electric variables measurement; MOS devices; Performance analysis; Stress measurement;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237222
