Deposition regularity and some properties of silicon dioxide films from monosilane oxidation

Complex investigation of the deposition regularities and the properties of silicon dioxide films obtained by monosilane oxidation at T=195°C and P=150 Torr was first conducted. It has found that the growth rate doesn´t depend on oxygen flow at υ₀₂ > 130 ml/min and the constant monosilane flow. When oxygen flow rate is constant and monosilane flow rate is decreased increasing of aerosil formation in gas phase, the degradation of the film growth and the composition uniformity are observed. Optimum deposition conditions are found to be υ₀₂ = 130 ml/min and υ_SiH4 = 180 ml/min to obtain the uniform films on area and the thickness at noted above temperature and pressure. It has shown that nonnative break-down of the deposited dielectric layers connects with the presence of the defects in the films. The results of the conducted investigations indicate necessity of the further process improvements to increase deposited film quality