Title :
VLSI multilevel micro-coaxial interconnects for high speed devices
Author :
Thomas, M.E. ; Saadat, I.A. ; Sekigahama, S.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
A novel interconnect scheme is presented which allows the fabrication of microwave microcoaxial interconnect (M/sup 2/CI) structures. This technology offers full compatibility with existing VLSI processes, tailor matching of characteristic impedance, and crosstalk-free interconnects. The present status of this technology is reviewed. It is noted that the implementation of this technique should substantially improve the present speed limitation imposed by multilevel wiring and open a new performance window for high-density VLSI devices.<>
Keywords :
MMIC; VLSI; metallisation; M/sup 2/CI; characteristic impedance; crosstalk-free interconnects; high-density VLSI devices; interconnect scheme; microwave microcoaxial interconnect; multilevel micro-coaxial interconnects; performance window; speed limitation; tailor matching; Crosstalk; Fabrication; Impedance; Microwave devices; Very large scale integration; Wiring;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237227
