• DocumentCode
    3319109
  • Title

    Planarized aluminum metallization for sub-0.5 mu m CMOS technology

  • Author

    Chen, F.S. ; Lin, Y.S. ; Dixit ; Sundaresan, R. ; Wei, C.C. ; Liou, F.T.

  • Author_Institution
    SGS-Thomson Microelectron., Carrollton, TX, USA
  • fYear
    1990
  • fDate
    9-12 Dec. 1990
  • Firstpage
    51
  • Lastpage
    54
  • Abstract
    The authors describe an aluminum sputter process, called the Al-plug process, which results in complete filling of submicron contacts and vias of various sizes. The process can be done in a conventional sputtering system. Material and electrical characterization of the film and the implementation of this process in submicron integrated circuits are presented.<>
  • Keywords
    CMOS integrated circuits; aluminium; integrated circuit technology; metallisation; sputtering; Al; electrical characterization; planarized metallisation; sputter process; sputtering system; submicron CMOS technology; submicron contacts; submicron integrated circuits; vias; Aluminum; CMOS technology; Contacts; Filling; Metallization; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1990.237228
  • Filename
    237228
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3319109