DocumentCode :
3319109
Title :
Planarized aluminum metallization for sub-0.5 mu m CMOS technology
Author :
Chen, F.S. ; Lin, Y.S. ; Dixit ; Sundaresan, R. ; Wei, C.C. ; Liou, F.T.
Author_Institution :
SGS-Thomson Microelectron., Carrollton, TX, USA
fYear :
1990
fDate :
9-12 Dec. 1990
Firstpage :
51
Lastpage :
54
Abstract :
The authors describe an aluminum sputter process, called the Al-plug process, which results in complete filling of submicron contacts and vias of various sizes. The process can be done in a conventional sputtering system. Material and electrical characterization of the film and the implementation of this process in submicron integrated circuits are presented.<>
Keywords :
CMOS integrated circuits; aluminium; integrated circuit technology; metallisation; sputtering; Al; electrical characterization; planarized metallisation; sputter process; sputtering system; submicron CMOS technology; submicron contacts; submicron integrated circuits; vias; Aluminum; CMOS technology; Contacts; Filling; Metallization; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.1990.237228
Filename :
237228
Link To Document :
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