An electrically steered reconfigurable channel waveguide in an active semiconductor slab

Author

Wa, P.L. ; Kutsche, Carl ; Loehr, John P. ; Kaspi, Ron

Author_Institution

Sch. of Opt., Univ. of Central Florida, Orlando, FL, USA

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

204

Abstract

We report the realization of a self-focused (soliton-like) waveguide that utilizes the carrier-induced nonlinearities of an active GaAs slab structure. A quasi cw 900nm laser beam was used to write the soliton-like waveguide that was effective at guiding another unrelated laser beam at 960nm. Steering of the laser beam over a distance of 20 μm at the output face of a 1.7mm long device was achieved by injecting an electrical current through a triangular metal electrode lying above the path of the optical beam

Keywords

III-V semiconductors; gallium arsenide; laser transitions; optical self-focusing; optical solitons; optical waveguides; semiconductor lasers; waveguide lasers; 1.7 mm; 20 mum; 900 nm; AlGaAs; GaAs; GaAs-AlGaAs waveguide lasers; active GaAs slab structure; active semiconductor slab; carrier-induced nonlinearities; electrical current; electrically steered reconfigurable channel waveguide; optical beam; quasi cw laser beam; self-focused optical soliton-like waveguide; soliton-like waveguide writing; triangular metal electrode; Diode lasers; Laser beams; Molecular beam epitaxial growth; Optical beams; Optical solitons; Optical waveguides; Semiconductor lasers; Semiconductor waveguides; Slabs; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737800

Filename

737800