High reliability interconnections for ULSI using Al-Si-Pd-Nb/Mo layered films

Author

Onuki, J. ; Koubuchi, Y. ; Fukada, S. ; Suwa, M. ; Koizumi, M. ; Gardner, D.S. ; Suzuki, H. ; Minowa, E.

Author_Institution

Hitachi Ltd., Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

43

Lastpage

46

Abstract

A new Al-Si-Pd-Nb alloy and a bilayered film using this alloy with Mo have been investigated for ULSI interconnections. Al-Si-0.3 wt.%-Pd-0.4 wt.%-Nb was found to have a five-times-better electromigration resistance than Al-Si-0.5% Cu. In addition, by layering this alloy with Mo, electromigration resistance was found to be ten times better than for Al-Si-Cu/TiW. Stress measurements detected the formation of PdO on the alloy´s surface and revealed a significant increase in tensile strength. The corrosion resistance of this alloy is much better than that of Al-Si-Cu possibly because of this PdO. The ease in patterning the alloy at submicron linewidths (to 0.5 mu m) is quite satisfactory. The Al-Si-Pd-Nb/Mo layered system is therefore thought to be quite promising for future interconnection applications requiring durability against high current density.<>

Keywords

VLSI; aluminium alloys; corrosion testing; electromigration; metallisation; molybdenum; niobium alloys; palladium alloys; silicon alloys; Si; SiGe; bilayered film; corrosion resistance; current density; electromigration resistance; interconnection applications; submicron linewidths; tensile strength; Copper alloys; Corrosion; Current density; Electromigration; Stress measurement; Surface resistance; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237230

Filename

237230