Title :
Ultralow threshold monolithically integrated surface and substrate emitting vertical cavity surface emitting lasers with properties controlled by oxide aperture placement
Author_Institution :
Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Use of thin oxide apertures placed at an optical node and spatially selective oxidation allow monolithic integration of uniform, ultralow threshold surface- and substrate-emitting VCSEL´s on a single epitaxial wafer for free-space interconnect systems
Keywords :
integrated optoelectronics; optical interconnections; oxidation; semiconductor lasers; surface emitting lasers; free-space interconnect systems; monolithic integration; optical node; oxide aperture placement; single epitaxial wafer; spatially selective oxidation; substrate emitting vertical cavity surface emitting lasers; thin oxide apertures; ultralow threshold monolithically integrated surface; uniform ultralow threshold substrate-emitting VCSEL; uniform ultralow threshold surface-emitting VCSEL; Apertures; Distributed Bragg reflectors; Optical interconnections; Optical losses; Optical surface waves; Stimulated emission; Substrates; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737802
