Ultralow threshold monolithically integrated surface and substrate emitting vertical cavity surface emitting lasers with properties controlled by oxide aperture placement

Author

Bond, Aaron E.

Author_Institution

Univ. of Southern California, Los Angeles, CA, USA

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

208

Abstract

Use of thin oxide apertures placed at an optical node and spatially selective oxidation allow monolithic integration of uniform, ultralow threshold surface- and substrate-emitting VCSEL´s on a single epitaxial wafer for free-space interconnect systems

Keywords

integrated optoelectronics; optical interconnections; oxidation; semiconductor lasers; surface emitting lasers; free-space interconnect systems; monolithic integration; optical node; oxide aperture placement; single epitaxial wafer; spatially selective oxidation; substrate emitting vertical cavity surface emitting lasers; thin oxide apertures; ultralow threshold monolithically integrated surface; uniform ultralow threshold substrate-emitting VCSEL; uniform ultralow threshold surface-emitting VCSEL; Apertures; Distributed Bragg reflectors; Optical interconnections; Optical losses; Optical surface waves; Stimulated emission; Substrates; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737802

Filename

737802