Semi-analytic calculation of diffraction losses and threshold currents in microcavity VCSELs

Author

Noble, Michael J. ; Loehr, John P. ; Lott, James A.

Author_Institution

Sensors Directorate, Hanscom AFB, MA, USA

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

212

Abstract

We present a new semi-analytic technique for estimating the diffraction loss and threshold gain of oxide apertured microcavity VCSELs. Apart from a few geometric simplifications, our calculation is based on a rigorous first-principles analysis of the modal fields. By combining the threshold gain with the electronic bandstructure and optical matrix elements, we calculate the threshold currents of microcavity VCSELs and obtain good agreement with experiments

Keywords

laser modes; laser theory; microcavity lasers; optical losses; semiconductor device models; semiconductor lasers; surface emitting lasers; diffraction losses; electronic bandstructure; geometric simplifications; microcavity VCSELs; modal fields; optical matrix elements; oxide apertured microcavity VCSELs; rigorous first-principles analysis; semi-analytic calculation; threshold currents; threshold gain; Apertures; Electromagnetic waveguides; Equations; Force sensors; Magnetic resonance; Microcavities; Optical diffraction; Optical losses; Optical waveguides; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737804

Filename

737804