Charge sharing effects in bipolar transistors with sub-halfmicron emitter widths

Author

Dekker, R. ; van Es, R. ; Jansen, S. ; Kranen, P. ; Maas, H. ; Pruijmboom, A. ; van der Velden, J.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

29

Lastpage

32

Abstract

It is shown by numerical simulation and experiment that, in transistors with a base link-up deeper than the intrinsic base, the electric field in the collector-base junction is reduced for very narrow emitters. This is due to charge sharing of the base link-up and intrinsic collector-base depletion regions in the epi-layer underneath the emitter. These 2-D effect cause a decrease in f/sub T/ and h/sub FE/, but an increase in V/sub eaf/. By keeping the base link-up shallow it is possible to minimize f/sub T/ decrease for narrow emitters. This is demonstrated in a transistor with f/sub T/=24 GHz (V/sub cb/=3 V) and an emitter width W/sub e/=0.1 mu m.<>

Keywords

bipolar transistors; semiconductor device models; 24 GHz; base link-up; bipolar transistors; charge sharing; collector-base junction; depletion regions; electric field; emitter width; epi-layer; sub-halfmicron emitter widths; Bipolar transistors; Iron; Numerical simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237233

Filename

237233