Identification of 1/f diffusion and recombination noise sources in bipolar transistors

Author

Decoutere, S. ; Deferm, L. ; Vanhorebeek, G. ; Claeys, C. ; Declerck, G.

Author_Institution

IMEC, Leuven, Belgium

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

25

Lastpage

28

Abstract

A method is proposed to identify 1/f noise sources in bipolar transistors related to mobility fluctuations in the base and collector current and to recombination at the surface of the emitter/base depletion region. It is shown that the physical location of the 1/f noise sources plays a key role in interpreting noise data. Excellent agreement between theory and measurements is illustrated for npn transistors of a BiCMOS technology. Experimental values of the Hooge parameters are compared with theoretical predictions, and the extraction procedure is used to interpret published results of low-impedance 1/f noise measurements.<>

Keywords

bipolar transistors; carrier mobility; electric noise measurement; electron device noise; electron-hole recombination; semiconductor device testing; 1/f diffusion noise; BiCMOS technology; Hooge parameters; base current; bipolar transistors; collector current; emitter/base depletion region; extraction procedure; mobility fluctuations; npn transistors; physical location; recombination noise sources; BiCMOS integrated circuits; Bipolar transistors; Data mining; Fluctuations; Noise measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237234

Filename

237234