Title :
Identification of 1/f diffusion and recombination noise sources in bipolar transistors
Author :
Decoutere, S. ; Deferm, L. ; Vanhorebeek, G. ; Claeys, C. ; Declerck, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
A method is proposed to identify 1/f noise sources in bipolar transistors related to mobility fluctuations in the base and collector current and to recombination at the surface of the emitter/base depletion region. It is shown that the physical location of the 1/f noise sources plays a key role in interpreting noise data. Excellent agreement between theory and measurements is illustrated for npn transistors of a BiCMOS technology. Experimental values of the Hooge parameters are compared with theoretical predictions, and the extraction procedure is used to interpret published results of low-impedance 1/f noise measurements.<>
Keywords :
bipolar transistors; carrier mobility; electric noise measurement; electron device noise; electron-hole recombination; semiconductor device testing; 1/f diffusion noise; BiCMOS technology; Hooge parameters; base current; bipolar transistors; collector current; emitter/base depletion region; extraction procedure; mobility fluctuations; npn transistors; physical location; recombination noise sources; BiCMOS integrated circuits; Bipolar transistors; Data mining; Fluctuations; Noise measurement;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237234
