Title :
Microwave differential structures optimization: application to a double balanced SiGe active down-converter design
Author :
Viallon, Christophe ; Parra, Thierry
Author_Institution :
Lab. for Anal. & Archit. of Sytsems, Paul Sabatier Univ., Toulouse, France
fDate :
30 Nov.-2 Dec. 2005
Abstract :
This paper deals with the design of high performance microwave and millimeter wave balanced circuits. It focuses on the design methodology and the description of some original techniques which improve the balance of microwave differential amplifiers. Based on these structures, an original broadband active balun is proposed and applied as RF and LO power splitters of a K band double balanced down-converter. This converter moreover involves a simplified Gilbert mixing cell, and 3D interconnections have been developed to prevent any balance damage at the couplers/mixer interfaces. The overall function, which converts a 20 GHz RF single-ended signal into a 1 GHz IF one, has been implemented on a compact single chip using a 0.25 μm SiGe BiCMOS process. Measurements show an 18 dB conversion gain, a 12 dB double side band noise figure and a -1 dBm OP1dB. Moreover, as a consequence of its highly balanced configuration, this circuit features outstanding port-to-port isolations as well as a spurious-free IF output spectrum.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC frequency convertors; MMIC mixers; baluns; circuit optimisation; differential amplifiers; 0.25 mum; 1 GHz; 12 dB; 18 dB; 20 GHz; BiCMOS process; Gilbert mixing cell; K band double balanced down-converter; SiGe; broadband active balun; compact single chip; couplers-mixer interfaces; double balanced active down-converter; double side band noise figure; microwave differential amplifiers; microwave differential structures optimization; microwave wave balanced circuits; millimeter wave balanced circuits; port-to-port isolations; power splitters; spurious-free IF output spectrum; Design methodology; Design optimization; Differential amplifiers; Germanium silicon alloys; Microwave circuits; Microwave theory and techniques; Millimeter wave circuits; Millimeter wave technology; Radio frequency; Silicon germanium; Differential amplifiers; baluns; interconnections; microwave mixers;
Conference_Titel :
Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, 2005. Proceedings. 2005 IEEE International Workshop on
Print_ISBN :
0-7803-9372-4
DOI :
10.1109/RFIT.2005.1598881