DocumentCode :
3319248
Title :
Photocapacitance relaxation and rigidity transition in GexAsxSe1−2x amorphous films
Author :
Vasiliev, I.A. ; Iovu, M.S. ; Colomeiko, E.P.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau, Moldova
Volume :
02
fYear :
2010
fDate :
11-13 Oct. 2010
Firstpage :
349
Lastpage :
352
Abstract :
The photocapacitance relaxation of GexAsxSe1-2x thin films is investigated for x=0.05, 0.07, 0.09, 0.14, 0.16, 0.18, 0.20 0.25 and 0.30. Compositional dependencies of the low-frequency dielectric permeability, decay time constant and the Kohlrausch parameter of nonexponentiality are deduced from these data. All parameters show two compositional thresholds, one situated near the xc(1)=0.09, and another - near the xc(2)=0.16-0.18. These phase transitions have been identified in the bulk samples by means of a differential-scanning calorimetric method (P. Boolchand et al., Europhys. Lett., 52, p. 633, 2000).
Keywords :
chalcogenide glasses; differential scanning calorimetry; germanium compounds; photocapacitance; semiconductor thin films; solid-state phase transformations; GexAsxSe1-2x; Kohlrausch parameter; amorphous films; compositional thresholds; decay time constant; differential-scanning calorimetry; low-frequency dielectric permeability; phase transitions; photocapacitance relaxation; rigidity transition; Capacitance; Dielectrics; Glass; Mathematical model; Optical films; Ultrafast optics; Amorphous films; dielectric relaxation; rigidity transition;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4244-5783-0
Type :
conf
DOI :
10.1109/SMICND.2010.5650648
Filename :
5650648
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3319248
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