Issues in high-frequency noise characterization and modeling of MOSFETs

Author

Chen, Chih-Hung

Author_Institution

Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada

fYear

2005

fDate

30 Nov.-2 Dec. 2005

Firstpage

119

Lastpage

122

Abstract

This paper provides an overview on the major issues in the high-frequency noise characterization of deep submicron MOSFETs for RF IC applications. It includes the HF noise parameter measurements, test structure design, parameter de-embedding, noise source extraction, physics-based noise models and noise sources implementations.

Keywords

MOS integrated circuits; MOSFET; radiofrequency integrated circuits; HF noise parameter measurements; MOSFET; RF IC; high-frequency noise; noise source extraction; noise sources implementations; parameter deembedding; physics-based noise models; test structure design; Hafnium; Integrated circuit modeling; Integrated circuit noise; MOSFETs; Noise figure; Noise measurement; Probes; Radio frequency; Radiofrequency integrated circuits; Scattering parameters; RF noise characterization; RF noise measurements; RF noise modeling; channel thermal noise; induced gate noise; noise correlation; noise implementation; noise source extraction; parameter de-embedding;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, 2005. Proceedings. 2005 IEEE International Workshop on

Print_ISBN

0-7803-9372-4

Type

conf

DOI

10.1109/RFIT.2005.1598889

Filename

1598889