Local structure and bonding of luminescent Er in GaN: a contrast with Er in Si

Author

Citrin, P.H. ; Northrup, P.A. ; Birkhahn, R. ; Steckl, A.J.

Author_Institution

Lucent Technol. Bell Labs., Murray Hill, NJ, USA

fYear

2000

fDate

2000

Firstpage

15

Lastpage

22

Abstract

X-ray absorption measurements from relatively high concentrations of Er (>0.1 at. percent) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si

Keywords

EXAFS; III-V semiconductors; bond lengths; doping profiles; electroluminescence; erbium; gallium compounds; semiconductor thin films; wide band gap semiconductors; Er-N bond length; GaN:Er; O impurities; X-ray absorption measurements; bonding; chemical concepts; electroluminescence intensities; local structure; luminescent Er; relatively high concentrations; Atomic measurements; Bonding; Electroluminescence; Electromagnetic wave absorption; Erbium; Gallium nitride; Luminescence; Optical films; Optical sensors; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939189

Filename

939189