Title :
Nonlinear directional coupler loaded with Bragg reflector
Author :
Nakatsuhara, K. ; Mizumoto, T. ; Takahashi, E. ; Hossain, S. ; Jeong, S.H. ; Ma, B.J. ; Nakano, Y.
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
The nonlinear symmetric directional coupler with Bragg reflector was fabricated using a GaInAsP-InP wafer, in which a 300 nm thick InP upper cladding layer and a 450 nm thick GaInAsP layer was used
Keywords :
Bragg gratings; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; nonlinear optics; optical directional couplers; optical switches; reflectivity; 300 mm; 450 mm; Bragg reflector loaded optical couplers; GaInAsP; GaInAsP layer; GaInAsP-InP; GaInAsP-InP wafer; InP upper cladding layer; nonlinear directional coupler; nonlinear optical switching; nonlinear symmetric directional coupler; Directional couplers; Nonlinear optical devices; Nonlinear optics; Optical bistability; Optical interferometry; Optical refraction; Optical sensors; Optical variables control; Optical waveguides; Power semiconductor switches;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737833
