DocumentCode
331944
Title
Soliton propagation in semiconductor waveguides
Author
Villeneuve, A. ; Bélanger, N. ; Dumais, P. ; Aitchison, J.S.
Author_Institution
Dept. de Phys., Laval Univ., Que., Canada
Volume
1
fYear
1998
fDate
1-4 Dec 1998
Firstpage
270
Abstract
Semiconductor waveguides are particularly useful for the observation of nonlinear propagation effect due to their large nonlinear refractive index, low propagation loss and high damage threshold. The material figure of merit clearly indicates two spectral regions over which semiconductors can be used, near the band edge with a self-defocusing nonlinearity and below half the band gap for a pure Kerr response and a self-focusing nonlinearity. Furthermore, a new disordering technique for multiple-quantum-well leads to new and interesting device applications. We will present here some of our results in both of these spectral regions. Bright soliton like pulses in self-defocusing AlGaAs below the band edge
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; optical Kerr effect; optical losses; optical waveguides; refractive index; AlGaAs; band edge; band gap; bright soliton like pulses; disordering technique; high damage threshold; large nonlinear refractive index; low propagation loss; material figure of merit; multiple-quantum-well; nonlinear propagation effect; pure Kerr response; self-defocusing AlGaAs; self-defocusing nonlinearity; self-focusing nonlinearity; semiconductor waveguides; soliton propagation; spectral region; spectral regions; Nonlinear equations; Nonlinear optics; Optical propagation; Optical pulses; Optical waveguides; Photonic band gap; Quantum well devices; Semiconductor waveguides; Solitons; Space vector pulse width modulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.737834
Filename
737834
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