DocumentCode :
331946
Title :
High-power Al-free coherent and incoherent diode lasers
Author :
Botez, D.
Author_Institution :
Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
Volume :
1
fYear :
1998
fDate :
1-4 Dec 1998
Firstpage :
274
Abstract :
Summary form only given. Al-free diode lasers are experiencing a veritable revolution due to several key advantages over their Al-containing counterparts: 1) vastly enhanced reliability for wavelengths below 0.82 μm; 2) lower series resistances leading to higher wallplug efficiencies; and 3) ease of regrowth(s) needed for spatial- and frequency-mode control
Keywords :
laser modes; laser reliability; laser transitions; semiconductor lasers; 0.82 mum; Al-containing counterparts; Al-free diode lasers; enhanced reliability; frequency-mode control; high-power Al-free coherent diode lasers; high-power Al-free incoherent diode lasers; lower series resistances; regrowth; spatial-mode control; wallplug efficiencies; Diode lasers; Electrons; Frequency; Gallium arsenide; Laser modes; Optical arrays; Phased arrays; Photonics; Power lasers; Semiconductor laser arrays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
Type :
conf
DOI :
10.1109/LEOS.1998.737836
Filename :
737836
Link To Document :
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