• DocumentCode
    331946
  • Title

    High-power Al-free coherent and incoherent diode lasers

  • Author

    Botez, D.

  • Author_Institution
    Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
  • Volume
    1
  • fYear
    1998
  • fDate
    1-4 Dec 1998
  • Firstpage
    274
  • Abstract
    Summary form only given. Al-free diode lasers are experiencing a veritable revolution due to several key advantages over their Al-containing counterparts: 1) vastly enhanced reliability for wavelengths below 0.82 μm; 2) lower series resistances leading to higher wallplug efficiencies; and 3) ease of regrowth(s) needed for spatial- and frequency-mode control
  • Keywords
    laser modes; laser reliability; laser transitions; semiconductor lasers; 0.82 mum; Al-containing counterparts; Al-free diode lasers; enhanced reliability; frequency-mode control; high-power Al-free coherent diode lasers; high-power Al-free incoherent diode lasers; lower series resistances; regrowth; spatial-mode control; wallplug efficiencies; Diode lasers; Electrons; Frequency; Gallium arsenide; Laser modes; Optical arrays; Phased arrays; Photonics; Power lasers; Semiconductor laser arrays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-4947-4
  • Type

    conf

  • DOI
    10.1109/LEOS.1998.737836
  • Filename
    737836