DocumentCode
331947
Title
795 nm-emitting 40 W CW high-temperature laser diode bars with Al-free active area
Author
Bournes, P. ; Asonen, H. ; Fang, F. ; Finander, M. ; Jansen, M. ; Nabiev, R.F. ; Nappi, J. ; Rakkenus, K. ; Salokatve, A.
Author_Institution
Semicond. Group, Coherent, Santa Clara, CA, USA
Volume
1
fYear
1998
fDate
1-4 Dec 1998
Firstpage
276
Abstract
We report reliable 40 W CW QW laser bars emitting 795 nm with 57% wall-plug efficiency, operating at temperatures as high as 75°C. Al-free active area structures with tensile-strained single quantum wells are grown by solid source MBE
Keywords
laser transitions; molecular beam epitaxial growth; quantum well lasers; 40 W; 57 percent; 75 C; 795 nm; Al-free active area; Al-free active area structures; CW high-temperature laser diode bars; reliable CW QW laser bars; solid source MBE; tensile-strained single quantum wells; Artificial intelligence; Bars; Diode lasers; Laser excitation; Power lasers; Pump lasers; Quantum well lasers; Temperature; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.737837
Filename
737837
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