Deep centers in as-grown and electron-irradiated n-GaN

Author

Fang, Z.Q. ; Polenta, L. ; Hemsky, J.W. ; Look, D.C.

Author_Institution

Semicond. Res. Center, Wright State Univ., Dayton, OH, USA

fYear

2000

fDate

2000

Firstpage

35

Lastpage

42

Abstract

Deep centers in as-grown and electron-irradiated n-GaN on sapphire have been characterized by deep level transient spectroscopy. Electron-irradiation (EI) creates V_N-related centers with activation energy E_T=0.06 eV and a center with E_T=0.85 eV, which might be related to N_I. Deep centers in as-grown materials show a close connection with high dislocation densities and some of them indeed behave like “line-defects”. Based on comparisons with EI-induced centers, some deep centers in as-grown materials are identified as possible point defects

Keywords

III-V semiconductors; deep level transient spectroscopy; defect states; dislocation density; electron beam effects; gallium compounds; point defects; wide band gap semiconductors; GaN; V_N-related centers; activation energy; as-grown n-GaN; deep centers; deep level transient spectroscopy; electron-irradiated n-GaN; high dislocation densities; line-defects; point defects; sapphire; Capacitance-voltage characteristics; Gallium nitride; Gold; MOCVD; Ohmic contacts; Optical devices; Optical materials; Sandwich structures; Schottky barriers; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939193

Filename

939193