Title :
Ion implantation into GaN: opportunities and problems
Author :
Kucheyev, S.O. ; Williams, J.S. ; Jagadish, C. ; Zou, J. ; Toth, M. ; Phillips, M.R. ; Li, G.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We summarize here our recent results on structural and optical characteristics of wurtzite GaN films bombarded under a wide range of implant conditions, as studied by Rutherford backscattering/channeling (RBS/C) spectrometry, transmission electron microscopy (TEM), atomic force microscopy (AFM), and cathodoluminescence (CL). Our results highlight current problems, associated with implantation-produced disorder, which may hinder a successful application of ion implantation in the fabrication of GaN-based devices
Keywords :
III-V semiconductors; Rutherford backscattering; atomic force microscopy; cathodoluminescence; channelling; gallium compounds; ion beam effects; ion implantation; semiconductor doping; transmission electron microscopy; wide band gap semiconductors; AFM; GaN; GaN-based devices; Rutherford backscattering; TEM; atomic force microscopy; cathodoluminescence; channeling; films; implant conditions; implantation-produced disorder; ion implantation; optical characteristics; structural characteristics; transmission electron microscopy; wurtzite; Atom optics; Atomic force microscopy; Electron optics; Gallium nitride; Implants; Ion implantation; Optical films; Optical microscopy; Particle beam optics; Transmission electron microscopy;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939195
