The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation

Author

Afifuddin, A. ; Butcher, K.S.A. ; Tansley, T.L. ; Timmers, H. ; Elliman, R.G. ; Weijers, T.D.M. ; Ophel, T.R.

Author_Institution

Dept. of Phys., Macquarie Univ., Sydney, NSW, Australia

fYear

2000

fDate

2000

Firstpage

51

Lastpage

54

Abstract

GaN has been grown by plasma assisted laser-induced chemical vapour deposition on sapphire and silicon substrates. The optical and morphological properties of the films are described. The films as grown exhibit a high resistivity. The stoichiometry of the films was determined with elastic recoil detection using 200 MeV Au ions as incident beam. Sample modifications induced by the Au beam have been found to increase conductivity. Similar changes occurred when the films were exposed to ultraviolet light

Keywords

III-V semiconductors; electrical resistivity; energy gap; gallium compounds; ion beam effects; laser deposition; light transmission; optical constants; plasma CVD coatings; semiconductor thin films; wide band gap semiconductors; 200 MeV; Al₂O₃; GaN; GaN films; Si; conductivity; elastic recoil detection; heavy ion irradiation; incident beam; morphological properties; optical properties; plasma assisted laser-induced chemical vapour deposition; resistivity; sample modifications; sapphire; stoichiometry; ultraviolet light; Chemical lasers; Chemical vapor deposition; Conductivity; Gallium nitride; Gold; Optical films; Particle beam optics; Plasma chemistry; Plasma properties; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939196

Filename

939196