Title :
A three-dimensional silicon photonic crystal
Author :
Lin, S.Y. ; Fleming, J.G. ; Hetherington, D.L. ; Smith, B.K. ; Biswas, R. ; Ho, K.-M. ; Sigalas, M.M. ; Zubrzycki, W.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
We report the realization of an infrared 3D photonic crystal built directly on a Si-wafer. Our 3D crystal shows a large photonic stop band from 10 to 14.5 μm along the ⟨100⟩ crystallographic direction, a strong attenuation constant of -12 dB per unit cell, and a spectral response uniformity to better than 1% over a 6 inch Si wafer. This demonstration opens the door for Si-based photonic crystal devices that are compatible with the well-developed Si microelectronics processes and is suitable for large scale photonic integration
Keywords :
integrated circuit technology; integrated optics; integrated optoelectronics; large scale integration; photonic band gap; silicon; ⟨100⟩ crystallographic direction; 10 to 14.5 mum; 3D Si IR photonic crystal; 3D crystal; 6 in; Si; Si microelectronics process compatability; Si wafer; Si-based photonic crystal devices; large photonic stop band; large scale photonic integration; spectral response; spectral response uniformity; strong attenuation constant; three-dimensional silicon photonic crystal; Laboratories; Lighting control; Optical control; Optical device fabrication; Optical devices; Periodic structures; Photonic crystals; Silicon; Stacking; US Department of Energy;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737847
