Title :
Low bias voltage dry etching of InP by inductively coupled plasma (ICP) using SiCl4/Ar
Author :
Matsutani, A. ; Koyama, Fumio ; Iga, K.
Author_Institution :
P&I Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We report on anisotropic and smooth etching of InP by low bias voltage ICP using SiCl4-Ar at high substrate temperature. We used an inductively coupled plasma (ICP) scanning electron microscope (SEM) photograph of circular array patterns of InP. The etching mask was a negative-type electron beam resist SAL601
Keywords :
III-V semiconductors; electron resists; indium compounds; micro-optics; micromechanical devices; optical fabrication; scanning electron microscopy; semiconductor technology; sputter etching; 1 keV; 20 W; 500 W; InP; SEM photograph; SiCl4-Ar; anisotropic smooth etching; circular array patterns; etching mask; high substrate temperature; inductively coupled plasma; inductively coupled plasma scanning electron microscope photograph; low bias voltage dry etching; microfabrication; negative-type electron beam resist SAL601; Argon; Dry etching; Indium phosphide; Low voltage; Plasma applications; Plasma measurements; Plasma properties; Plasma temperature; Scanning electron microscopy; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737848
