• DocumentCode
    331957
  • Title

    Low bias voltage dry etching of InP by inductively coupled plasma (ICP) using SiCl4/Ar

  • Author

    Matsutani, A. ; Koyama, Fumio ; Iga, K.

  • Author_Institution
    P&I Lab., Tokyo Inst. of Technol., Yokohama, Japan
  • Volume
    1
  • fYear
    1998
  • fDate
    1-4 Dec 1998
  • Firstpage
    297
  • Abstract
    We report on anisotropic and smooth etching of InP by low bias voltage ICP using SiCl4-Ar at high substrate temperature. We used an inductively coupled plasma (ICP) scanning electron microscope (SEM) photograph of circular array patterns of InP. The etching mask was a negative-type electron beam resist SAL601
  • Keywords
    III-V semiconductors; electron resists; indium compounds; micro-optics; micromechanical devices; optical fabrication; scanning electron microscopy; semiconductor technology; sputter etching; 1 keV; 20 W; 500 W; InP; SEM photograph; SiCl4-Ar; anisotropic smooth etching; circular array patterns; etching mask; high substrate temperature; inductively coupled plasma; inductively coupled plasma scanning electron microscope photograph; low bias voltage dry etching; microfabrication; negative-type electron beam resist SAL601; Argon; Dry etching; Indium phosphide; Low voltage; Plasma applications; Plasma measurements; Plasma properties; Plasma temperature; Scanning electron microscopy; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-4947-4
  • Type

    conf

  • DOI
    10.1109/LEOS.1998.737848
  • Filename
    737848
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=331957