Title :
Influence of Be doping on the structural properties of low-temperature grown GaAs
Author :
Luysberg, M. ; Specht, P. ; Weber, E.R.
Author_Institution :
Inst. fur Festkorperforschung, Forschungszentrum Julich GmbH, Germany
Abstract :
The influence of Be doping on the limitations to perfect epitaxial growth of LT-GaAs is investigated by transmission electron microscopy. Be doped GaAs films with doping levels up to 1.5 1021 cm-3 were grown by molecular beam epitaxy at 190°C to 250°C. In general the Be doped films seem to grow with high perfection. The roughening of the growth front is not as pronounced as in undoped material, resulting in a larger defect-free layer thickness. Even very high Be doping levels of 8 1020 cm-3 do not show any structural defects. However, if the Be doping level is increased to 1.5 1021 cm-3, high densities of stacking faults and precipitates are observed, although the film maintains a perfect crystallinity
Keywords :
III-V semiconductors; beryllium; gallium arsenide; heavily doped semiconductors; molecular beam epitaxial growth; precipitation; rough surfaces; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; stacking faults; transmission electron microscopy; 190 to 250 C; Be doped GaAs films; Be doping; GaAs:Be; LT-GaAs; epitaxial growth; growth front; high perfection; low-temperature grown GaAs; molecular beam epitaxy; perfect crystallinity; precipitates; roughening; stacking faults; structural defects; structural properties; transmission electron microscopy; Crystalline materials; Crystallization; Doping; Epitaxial growth; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Stacking; Temperature; Transmission electron microscopy;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939202
