A comparative study of the Ostwald ripening of As precipitates in LT-MBE grown and in As implanted GaAs

Author

Toufella, M. ; Bonafos, C. ; Ben Assayag, G. ; de Mauduit, B. ; Bedel, E. ; Fontaine, C. ; Pucch, P. ; Carles, R. ; Chalddyshev, V. ; Claverie, A.

Author_Institution

CEMES/CNRS, Toulouse, France

fYear

2000

fDate

2000

Firstpage

85

Lastpage

88

Abstract

In this work, we compare the kinetic behavior of As precipitates in Low Temperature Molecular Beam Epitaxy (LT-MBE) grown and As implanted As rich GaAs layers. The evolution of the mean radius, density and volume fraction of As precipitates are measured by Transmission Electron Microscopy as a function of the annealing conditions on both type of layers. While for LT-MBE the As precipitates undergo a conservative Ostwald ripening, for implanted layers this growth is frozen. This behavior is tentatively explained by a vacancy deficit due to the presence of interstitial type extended defects in the implanted layers

Keywords

III-V semiconductors; annealing; extended defects; gallium arsenide; interstitials; ion implantation; molecular beam epitaxial growth; precipitation; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; vacancies (crystal); As implanted GaAs; As precipitates; As rich GaAs layers; GaAs; LT-MBE; LT-MBE grown GaAs; Ostwald ripening; annealing conditions; conservative Ostwald ripening; interstitial type extended defects; kinetic behavior; low temperature molecular beam epitaxy; transmission electron microscopy; vacancy deficit; Annealing; Atomic layer deposition; Density measurement; Gallium arsenide; Kinetic theory; Molecular beam epitaxial growth; Phase measurement; Temperature; Transmission electron microscopy; Volume measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939203

Filename

939203